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sca sce 160da thyristor module cir cuit diagram ul; e76102 m sca sce 160da featur es and advantages L w new and unique gate design for higher di/dv (integrated thyristor . 2.5 times higher than existing products) w ? < = <_ = ? = = =. < > ; w newly designed and less-layered internal structure for improved heat dissipation (low thermal resistance) w y
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w ; w ulf ?ul file oe76102 w $ -rohs|?& w in addition to reduced layer design, soldering on both sides of chips increased the long-term reliability (2 times longer than existing products) w ul recognized under ul file oe76102 w eu rohs compliant applications ? w motor drives w z ; =j==d<_=@ w power controller w ?? e
t+ w ups w ups w soft starter w ==,===<_=<_ w power supplies w ?o
? maximum ratings ?? tj25 unless otherwise speci?ed???tj25?? symbol ? item ?? ratings unit g sca160da80 SCE160DA80 sca160da160 sce160da160 v rrm *repetitive peak reverse v oltage ?`R?R 800 1600 v v rsm *non-repetitive peak reverse v oltage ?`R?R 960 1700 v v drm repetitive peak of f-state v oltage ?`R?R 800 1600 v symbol ? item ?? conditions ratings unit g i t a v i f a v *a verage on-state forwar d curr ent ?? s i n g l e p h a s e , h a l f w a v e , 1 8 0 c o n d u c t i o n , g??180?? t c 8 8 160 a i t rms i f rms *r.m.s. on-state forwar d curr ent g? s i n g l e p h a s e , h a l f w a v e , 1 8 0 c o n d u c t i o n , g?g180?? t c 8 8 251 a i tsm i fsm *sur ge on-state forwar d curr ent ??`? ?cycle, 50/60hz, peak value, non-r epetitive 50 /60hz?g???R 5400/5900 a i 2 t *i 2 t \rge v alue for one cycle sur ge curr ent ??`?? 145000 a 2 s p gm peak gate power dissipation ?``?p? 10 w p g a v a verage gate power dissipation ?`?p? 3 w i fgm peak gate curr ent ?`` 3 a v fgm peak gate v oltage forwar d ?``?R 10 v v rgm peak gate v oltage reverse ?``?R 5 v di/dt critical rate of rise of on-state curr ent R?N i g 100ma, v d ?v drm , di g /dt0.1a/s 500 a/s v iso *isolation br eakdown v oltage ~F?R a.c. 1minute ga.c.g 2500 v tj *operating junction t emperatur e ??? 40125 t stg *storage t emperatur e ? 40125 mounting t or que ?? mount m6 ? recommended value ?X 2.53.9n?m 4.7 n ? m t erminal m6 recommended value ?X 2.53.9n?m 4.7 mass| t ypical value?? 210 g sca160aa-s75-1303 ? ? ? ? ? ?? ? ? ? ? . tdsfxjohefquinn unit gmm ? , ( , (
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q 0otubuf7pmubhf%spqy7 5. 7 |??yy7 5. 7 0otubuf1fbl$vssfouy* 5 " |??v * 5 " electrical characteristicsy 8?h>8$8?lq tjs125s? unless otherwise speci?eds4w|opdsdvr?idxtjs125s?dqdbd/s symbol pgi? item syisye conditions syrsyie ratings syopctc unit to?a min. w7rz typ. sarj max. w7tg i drm repetitive peak of f-state curr ent d|d?o?lv tjs1125s?, v d s1v drm 100 ma i rrm *repetitive peak reverse curr ent s?poo?lv tjs1125s?, v r s1v rrm 100 ma v tm v fm *on-state sforwar ds v oltage s?d|d?srqso??y i t s1500a 1.4 v v t stos *thr eshold v oltage s?etco??y tjs125s? 1.07 v tjs1125s? 0.87 rt *dynamic resistance s?d|d?osi? tjs125s? 1.50 m?h tjs1125s? 0.96 i gt gate t rigger curr ent d?s/d?d?d?do?lv v d s16v , i t s11a 100 ma v gt gate t rigger v oltage d?s/d?d?d?do??y v d s16v , i t s11a 3 v v gd gate non-t rigger v oltage d?s/d?s9d?d?do??y tjs1125s?, v d s1?v drm 0.25 v tgt t ur n-on time d?s/d?d|d?wp5 i t s1160a, i g s1100ma, v d s1?v drm, di g /dts10.1a/?2s 10 ?2s dv/dt critical rate of rise of of f-state v oltage lxc8d|d?o??yrrlp tjs1125s?, v d s1$vv drm , exp. waveform 1000 v/?2s i h holding curr ent e-w?o?lv 140 ma i l latching curr ent d?d?d?d?d?o?lv 230 ma rth sj-cs *thermal resistance s?o?osi? cont., junction to case , per one element hvis?shd*s/dp5 cont. , to?adddyd?d?opd? 0.17 s?/w rth sj-cs *ef fective thermal resistance s?w?i?o?osi? sin.180s? , junction to case, per one element hvis?shd*s/dp5, sin.180s? , to?adddyd?d?opd? 0.18 s?/w r ec.120s? , junction to case, per one element hvis?shd*s/dp5, r ec.120s? , to?adddyd?d?opd? 0.19 rth sc-ss *interface thermal resistance s?hvr?o?osi? case to heat sink, per one element d*s/dshd?s/d?d3d?d?p5, to?adddyd?d?opd? thermal conductivity ssilicon gr eases s17s10 s3 s|w/;2 s~ s?s d3d?dd?d?d?ddwo?o;oclps17s10 s3 s|w/;2 s~ s?s 0.1 s?/w * mark: thyristor and diode part. no mark: thyristor part. t?srsts??1dwiedxszddvd?dd?s?ptd|d?dvd|s/d?s?dwl-emdto&l;d`d9dbs{dfdwtldwiedxrjdtddvd?dd?s?dto&l;d`d9dbs{
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